HfO2-Based Junctionless FeFET Array on FDSOI Platform for NAND Memory Applications

In this letter, HfO2-based junctionless ferroelectric-gate field effect transistors (FeFETs) and the FeFET NAND memory arrays are proposed and experimentally demonstrated, on FDSOI. High performance including ultra-low leakage(
$\sim $
pA) and ultra-high
$\text{I}_{\text {PGM}}/\text{I}_{\text {ERS}}$
ratios (
$10^{{5}}{)}$
can be achieved. Furthermore, the memory functions of the NAND arrays are experimentally demonstrated. FDSOI-based NAND FeFETs will be promising for the next-generation high density, low power memory and edge computing.