Full-Color AC-Driven Electroluminescences From Rare Earths-Doped ZnGa2O4 in MOS Structure

$\text {ZnGa}_{{2}}\text {O}_{{4}}$
, a wide bandgap ternary oxide material, has recently attracted scientific attention in optoelectronics, especially for electroluminescent (EL) devices. It is well-known as a good host material for transition metals and rare earths (REs) elements. Herein, the full-color red-green-blue (RGB) EL devices are introduced using REs-doped
$\text {ZnGa}_{{2}}\text {O}_{{4}}$
(RZGO), REs =
$\text {Ce}^{{3}+}$
,
$\text {Tb}^{{3}+}$
, and
$\text {Eu}^{{3}+}$
, in a metal-oxide-semiconductor (MOS) structure. The RZGO MOS-EL devices were deposited on the silicon substrate through a facile all-solution precursor in an air atmosphere annealing solid-state reaction method. It is formed as a spinel crystallized
$\text {ZnGa}_{{2}}\text {O}_{{4}}$
accompanied by amorphous SiOx. Under alternating-current sinusoidal waveform, the EL devices emit full-color RGB spectra which are optically attributed to the spin-allowed and spin-forbidden transitions of
$\text {Ce}^{{3}+}$
,
$\text {Tb}^{{3}+}$
, and
$\text {Eu}^{{3}+}$
ions within the
$\text {ZnGa}_{{2}}\text {O}_{{4}}$
host lattice. The optical performances of the RZGO MOS-EL devices are presented according to various applied sinusoidal voltages. Finally, this study could provide a feasible application of the realization of
$\text {ZnGa}_{{2}}\text {O}_{{4}}$
material for a full-color RGB large-area emitting device based on the MOS structure in silicon electronics.