Improved Ferroelectricity and Tunneling Electro Resistance in Zr-Rich HfxZr1-xO2 Ferroelectric Tunnel Junction

HfO2 based ferroelectric materials have great application potential in ferroelectric tunneling junction. Here, the low temperature annealed Zr-Rich HfxZr
$1_{-\text {x}}\text{O}_{{2}}$
films based ferroelectric tunnel junction is fabricated on a silicon substrate. It is found that ferroelectricity of the film under operating voltages of 3.3V, 3.5V and 3.7V are excellent, where the largest residual polarization 2Pr is above 50
$\mu \text{C}$
/cm2. The excellent ferroelectricity enables the device to operate at an extremely high speed of 50ns and achieve a high tunneling electro resistance ratio (>50). Based on the first principal calculation, we found that Zr-Rich HfxZr1-xO2 films will show more O-phase and less T-phase. This research paves the pathway to improve the performance of the HfO2 based ferroelectric tunneling junction for future ferroelectric application.