High-Power and High-Linearity Photodiodes at 1064 nm

Back-illuminated flip-chip-bonded InP/InGaAs modified uni-traveling-carrier photodiodes working at 1064 nm wavelength are demonstrated. The RF output powers of photodiodes with diameters of 10 μm and 20 μm are 15 dBm at 60 GHz and 21.7 dBm at 39 GHz, respectively. The measured third-order output intercept point (OIP3) shows a high linearity of 33 dBm at 40 GHz. A circuit analysis based on Z-parameter extraction indicates that voltage-dependent and photocurrent-dependent capacitance components are the primary nonlinear mechanisms.