Optimizing Lifetime Capacity and Read Performance of Bit-Alterable 3-D NAND Flash

With the technology advance of bit-alterable 3-D NAND flash, bit-level program and erase operations have been realized and provide the possibility of “bit-level rewrite.” Bit-level rewrite is predicted to be highly beneficial to the performance of the densely packed, bit-error-prone 3-D NAND flash because bit-level rewrites can remove error bits at bit-level granularity, shorten the error correction latency, and boost the read performance. Distinctly, bit-level rewrite can curtail the lifetime expense of refresh operations via correcting the error bit stored in the individual flash cell directly without a full-page rewrite, which is employed by previous refresh techniques. However, because bit-level rewrite is predicted to have similar latency and wearing as conventional full-page rewrites, the throughput of bit-level rewrites needs to be examined to avoid low rewrite efficiency. This observation inspires us to investigate and propose the bit-level error removal (BER) scheme to utilize the bit-level rewrites for optimizing both the read performance and lifetime capacity in a most-efficient way. The experimental results are encouraging and showed that the read performance can be improved by an average of 25.22% with 40.39% reduction of lifetime expense.