Testing 3-D IC Through-Silicon-Vias (TSVs) by Direct Probing

Testing the integrity of interconnects realized by through silicon vias (TSVs) in 3-D integrated circuits (3-D IC) is considered a challenging task. TSVs are excessively small and fragile for current probe technology. In this paper, a new spring-type probe using microelectromechanical systems (MEMS) technology is presented. The implemented MEMS probe supports the required pitch for TSV direct probing and minimizes the undesired scrub marks on TSV surface. Simulation results indicate that the implemented MEMS probe can operate at the gigahertz frequency range without significant test signal degradation.

I. Introduction

Three-Dimensional integrated circuit (3-D IC) technology allows vertical integration of multiple stacked dies into a single chip by using through-silicon via (TSVs) that utilizes short, vertical connections that passes through a silicon wafer to establish an electrical connection from the active side to the backside of thinned dies Fig. 1. This new system integration supports higher frequency of operation and lower power consumption which can lead to the creation of new generations of system-on-chips [1]–[5]. Fig. 1.

3-D IC simple architecture.