Layout Aware Optimization Methodology for SOT-MRAM Based on Technically Feasible Top-Pinned Magnetic Tunnel Junction Process

The emerging spin-orbit torque magnetic random-access memory (SOT-MRAM) shows promising prospects in high-level cache applications due to its subnanosecond switching speed and high reliability. However, SOT-MRAM faces the issue of large bit-cell layout area, which is currently the focus of attention. Although many design and evaluation works have emerged, the lack of a unified standard for realistic SOT process has hindered the development of relevant research toward practicality. In this article, the bit-cell area of the SOT-MRAM will be evaluated and optimized based on the technically feasible process. First of all, based on the state-of-the-art top-pinned SOT nanopillar process, the SOT-MRAM design rules are proposed. On this basis, this article systematically summarizes four basic device layout modes and provides optimized layout suggestions for conventional SOT bit-cells with different types and sizes of devices. In addition, a series of area-efficient SOT bit-cell designs based on the common area (CA) and dual common (DC) solutions are proposed, which can reduce the layout area of SOT bit-cells by up to 38.4% with reasonable write latency and energy overhead.