Scalable p-i-n Diode Modeling and Parameter Extraction for Use in the Design of W-Band GaAs Switch

Scalable modeling and parameter extraction of the millimeter-wave GaAs-based p-i-n diode for
W
-band switch design are presented in this article. A direct-extraction method based on the
S
-parameters on-wafer measurement is utilized to determine the extrinsic and intrinsic model parameters without any de-embedding test structures. Under turn-
on
and turn-
off
bias conditions, the modeled input reflection coefficients agree well with the measured data in the entire frequency ranges for GaAs-based p-i-n diode. The scalable normalization rules have been used to design
W
-band p-i-n diode switch successfully; good agreements are obtained between the simulated and measured data to verify the accuracy of the proposed model.