Novel Temperature Calibration Method of E-Mode and D-Mode GaN Power Modules Considering Dynamic ON-Resistance

In this article, we present a method for measuring temperature using the temperature-sensitive parameter (TSP) of a GaN power module. Current collapse occurs in GaN high electron mobility transistors (HEMTs). This results in dynamic
on
-resistance because of the trapped electrons. Thus, dynamic conditions should be considered to accurately measure thermal characteristics. GaN HEMTs are operated in the enhanced mode (E-mode) and depletion mode (D-mode). In this study, E-mode and D-mode GaN power modules are designed to compare their thermal characteristics. Among three common temperature-measurement methods, this work employs the TSP-based approach in consideration of the device operation, instead of those using thermosensitive optical or material properties. The calibration is conducted in steady state and dynamic state. The ambient temperature is estimated using steady-state calibration data. Power cycling is examined for considering dynamic conditions. It is confirmed that the dynamic
on
-resistance changes according to the cycle period, on time, and number of cycles. Experiments are conducted using different values of these parameters. Finally, an equation for temperature is obtained from the experimental results. The equation precisely estimates temperature with an error of 0.7%.