Increasing the Speed of an InP-Based Integration Platform by Introducing High Speed Electroabsorption Modulators

We report high speed electroabsorption modulators (EAMs), designed, fabricated and characterized within an open access generic foundry process. The EAM as a new building block is optimized in the existing platform, in which other BBs are established. By optimizing the EAM design layout, we show a static extinction ratio (static ER) of 18 dB, a low dc bias voltage below 1 V at an increased temperature, as well as operation in a semicooled environment, tested in the range of 20 °C -60 °C. Furthermore, we improve the intrinsic S-parameter response with a codesign circuit. The intrinsic 3-dB bandwidth of a 100-μm-long EAM is 17 GHz. When measured with the EAM submount design, it is increased to 24 GHz. Simultaneously, the return loss bandwidth is improved by a factor of 2.5 staying below -10 dB up to 20 GHz. Through the realization of the EAM submount design we achieve a three-time speed increase of the existing platform, from previously offered 9 GHz (using an EAM) to 24 GHz shown in this paper.