Progress in Germanium Tin (GeSn) Photonic Crystal Lasers

We report on lasing in two types of Germanium-Tin (GeSn) photonic crystal lasers, with band-edge and H4 hexagonal cavities. A GeSn 16% step-graded structure was used as the optical gain material. The strong out-of-plane emission observed in the band-edge cavity was attributed to the thick optical gain layer, in addition with the presence of leaky band-edge modes above the light cones and a high photonic density of states. The maximum lasing temperature in both types of photonic crystal lasers, 180 K, was lower than in a micro-disk laser fabricated from the same stack, i.e., 230 K. Meanwhile, the lasing thresholds at low temperature (15 K) were very similar (120 kW/cm
²
for a band-edge cavity and 140 kW/cm
²
for a H4 cavity, to be compared with 134 kW/cm
²
for a micro-disk cavity). Since the injected carrier density is governed by the pump power, we suggest the strong variation of optical gain at low temperature, for a small variation of injected carrier density, as a possible cause of such a phenomenon.