Comprehensive Study of the Performance of SiC MOSFET-Based Automotive DC–DC Converter Under the Influence of Parasitic Inductance

With low loss, fast switching speed, and high-temperature capabilities, silicon carbide (SiC)-based devices are beneficial to automotive power converters in terms of efficiency increase and size reduction. Nevertheless, as a result of fast switching transitions and low on-state resistance of SiC devices, SiC-based converters are prone to overshoots and oscillations on switching waveforms, with the presence of parasitic inductances in the circuit. The overshoots and oscillations further contribute to increased converter loss and EMI emissions. This paper aims to study the influence of parasitic inductances on the performance of SiC MOSFETs for automotive dc-dc converters from the loss and electromagnetic interference perspective.