High-Intensity Implantation With an Ion Beam’s Energy Impact on Materials

This article describes a new method of modifying the properties of materials based on synergistic ion implantation and repetitively pulsed energy impact on the materials’ microstructures using high-intensity ion beams with microsubmillisecond durations. High-intensity implantation was carried out at ion beam current densities of several amperes per square centimeter at ion energies of several tens of keV with pulse durations ranging from several tens to several hundred microseconds. These ion beam parameters allowed us to obtain radiation-enhanced diffusion of dopants to depths exceeding the ion beam’s projective range by several orders of magnitude. The high power density and energy density of the ion beam provided fast heating and ultrafast cooling of the near-surface layer due to high-speed heat transfer into the target materials. The results of numerical modeling of the temperature field distribution under the ion beam’s action on the surface with a pulse duration of
$50~\mu \text{s}$
at an energy density of approximately 10 J/cm
²
are presented. The advantages and disadvantages of ion beam formation with a power density of more than 10
⁵
W/cm
²
based on plasma immersion ion extraction or in an ion source are analyzed. The possibility of forming a pulsed beam of titanium ions from vacuum arc discharge plasma with a current density of approximately 5 A/cm
²
and a pulse duration of
$95~\mu \text{s}$
was experimentally confirmed.