Threshold Voltage Reduction and Mobility Improvement of LTPS-TFTs With NH3 Plasma Treatment

In this paper, NH
₃
plasma directly applied to the surface of poly-Si channel is studied for the development of high-performance low-temperature polycrystalline-silicon thinfilm transistors (LTPS-TFTs) with HfO
₂
high-κ gate dielectric. The reduction of threshold voltage from 1.52 to 0.62 V, the decrease of subthreshold swing from 227 to 151 mV/decade, and the enhancement of field effect mobility μFE from 31 to 65 cm
²
/V s are observed after NH
₃
plasma surface treatment. It can be attributed to the NH
₃
plasma surface treatment enabling defect passivation and plasma-induced interfacial layer (PIL) growth. To decouple the impacts of defect passivation and PIL growth, the device without PIL is also fabricated. This paper demonstrates the important impacts of NH
₃
plasma surface treatment on the improvement of electrical characteristics of LTPS-TFTs.