Fabrication of a 4H-SiC p-i-n Diode Array for High Energy Particle Detection

In the field of high energy particle imaging detection, there is an urgent requirement for detectors with radiation hardness and thermal resistance. Here, we design a 4H-SiC pixel detector based on a
$4\times4$
p-i-n diode array. The thickness of sensitive region (epitaxial layer) is up to
$90 ~\mu \text{m}$
, which could realize the detection of 6-MeV tritium. The active area of one p-i-n diode is 1.6 mm
$\times1.6$
mm. With an excellent design of gradual doping space modulated (GDSM) junction termination extension (JTE), the reverse bias voltage is up to 5 kV, and the average leakage current is lower than 70 pA when the reverse bias voltage is 400 V. Based on a 16-channel readout electronic system, this detector shows good performance in the position resolution experiment for 5.4-MeV
$\alpha $
particles.