Investigation of Negative Bias Effect on Radiation Hardening for Double SOI Technology

Double silicon-on-insulator (DSOI) technology featuring two buried oxide layers under silicon film has drawn excessive attention to space applications by modulating the electric field in back channel. This article studied the impact of the total ionizing dose (TID) effect on the n-channel metal oxide semiconductor field effect transistors (nMOSFETs) based on DSOI materials. Radiation-induced degradation in performance only appeared in the metal oxide semiconductor field effect transistor (MOSFET) with
$W/L = 0.15~\mu \text{m}$
/10
$\mu \text{m}$
after 1.5 Mrad(Si) irradiation and recovered with negative
$V_{\mathrm {bg}}$
applied. However, due to the weak coupling effect between the front and back gates, the threshold voltage (
$V_{\mathrm {th}}$
) of nMOSFET with
$W/L = 10~\mu \text{m}$
/10
$\mu \text{m}$
and
$10~\mu \text{m}/0.13~\mu \text{m}$
declined 0.06 V compared with devices before irradiation when
$V_{\mathrm {bg}}$
is set to 0 V. The TCAD simulation and testing results reveal that the electric field introduced by negative back-gate bias could effectively mitigate the TID-induced performance degradation in DSOI nMOSFETs. The investigation will facilitate the application of DSOI technology for high-radiation-dose conditions.