Composite Scintillators Based on the Films and Crystals of (Lu,Gd,La)2Si2O7 Pyrosilicates

This article is directed on the creation of composite scintillators which are based on the films and crystals of R
₂
Si
₂
O
₇
:Ce (R = Lu, Gd, La) pyrosilicates using the liquid phase epitaxy (LPE) growth method for application in the radiation monitoring of different components of mixed ionization fluxes. Such types of composite scintillators are epitaxial structures containing film scintillators grown by the LPE method onto the substrates of crystal scintillators. In this article, the film and crystal parts of the composite scintillators were fabricated from effective scintillation materials on the base of Ce
³⁺
doped Gd
_2-x
Lu
_x
Si
₂
O
₇
and Gd
_2-x
La
_x
Si
₂
O
₇
, and x = 0 and 0.25 mixed pyrosilicates with various scintillation decay kinetics due to the different Lu/Gd/La cation content. We briefly report on the results of the LPE growth of the composite scintillators based on the Ce
³⁺
doped (Lu,Gd)
₂
Si
₂
O
₇
films and (Gd,La)
₂
Si
₂
O
₇
:Ce crystal substrates, as well as the results of investigation of their luminescent and scintillation properties.