Total Ionizing Dose Effect in LDMOS Oxides and Devices

Laterally diffused metal-oxide-semiconductors transistors PD-silicon on insulator 150-nm mixed technology from Microchip are irradiated with
⁶⁰
Co gamma rays. Those irradiations have revealed a high sensitivity of the LDnMOS and LDpMOS pointing out that the main sensitive parameter is the ON-resistance. In this paper, degradation mechanisms at play are investigated through TCAD simulation, and an explanation of the physical mechanisms for the observed degradation is proposed.