Heavy Ion, Proton, and Neutron Charge Deposition Analyses in Several Semiconductor Materials

The charge deposition of particles in materials is the primary stage in inducing ionization radiation effects. We analyzed charge depositions of heavy ion, proton, and neutron in digital integrated circuit (IC) materials [i.e., C(diamond), Si, Ge, and GaAs] and power IC materials [i.e., C(diamond), Si, SiC, and GaN] in this paper. For proton and heavy ion direct ionizations, the maximum deposited charge per unit length [i.e., (dQ/dx)max] was extracted for comparisons among these materials. For proton and neutron indirect ionizations, the maximum recoil-deposited charge (i.e., Qdepmax) and the recoil numbers were used for comparisons. The deposited charge by the low-energy recoils was modeled by the ionization efficiencies which were obtained from transport of ions in matter Monte Carlo simulations. The influences of temperature and doping concentration were also discussed.