Damage Factor for Radiation-Induced Dark Current in InGaAs Photodiodes

In this paper, a compendium of InGaAs photodiode irradiation test results is presented. These photodiodes were irradiated either with γ-rays, protons, neutrons, electrons, pions, alpha particles, or carbon ions of various energies. The displacement damage dose formalism was found to be effective in describing the radiation-induced dark current increase of any of the studied InGaAs photodiodes. The exploitation of capacitancebias voltage and current-bias voltage measurements also allows us to deduce a damage factor that can be used to assess the radiation-induced dark current in a great number of radiation environments.