I. Introduction
The complexity of modern System-on-Chip (SoC) devices enables increasingly powerful spaceborne payloads. Deep submicron technologies enable unprecedented performance with optimized power, but storage elements and logic gates exhibit greater susceptibility to single event effects from lighter particles with low Linear Energy Transfer (LET). Radiation Hardened by Design (RHBD) techniques are used extensively to mitigate the increased vulnerabilities in SRAM cells, flip-flops and logic gates in high reliability terrestrial applications, like high performance computing and network systems, and in space applications. Evaluating the Single Event Effects (SEE) error performance of a complex design is vital to understanding the system reliability.