Performance Study of an Integrated $\Delta {\hbox{E}}{\hbox{–}}{\hbox{E}}$ Silicon Detector Telescope using the Lohengrin Fission Fragment Separator at ILL, Grenoble

We have developed an integrated ΔE-E silicon detector telescope using silicon planar technology. Standard integrated circuit technology involving double-sided wafer processing has been used to realize two detectors on a single chip. The ΔE detector is fabricated in epitaxial layer of thicknesses of 10, 15, or 25 μm deposited over the high resistivity silicon wafers of thicknesses of 300 μm. The E detector is fabricated in the base wafer, resulting in a thickness of 300 μm. The detector with the ΔE detector of thickness of 10 μm and E detector of thickness 300 μm has been characterized for light and heavy ions using the Lohengrin fission fragment separator at Institut Laue-Langevin (ILL), Grenoble, France. The results demonstrate the suitability of the integrated detector for identification of fission fragments and their energy measurement. The detector response was precisely characterized by a nuclear charge dependent approach, which differs from the usual mass-dependent characterization.