Abstract:
The radiation induced charge trapping at the silicon sapphire interface and its effect on MIS/SOS device performance has been experimentally determined for a total ionizi...Show MoreMetadata
Abstract:
The radiation induced charge trapping at the silicon sapphire interface and its effect on MIS/SOS device performance has been experimentally determined for a total ionizing dose up to 108 rads (Si). These effects were determined by measuring the electrical characteristics of three types of device structures fabricated in SOS material: MIS devices with hardened and unhardened gate insulators, JFET's and diodes. The main emphasis is on the use of novel JFET structures for characterizing the SOS interface by modulating the gate depletion region against the sapphire substrate. Micrographs are also presented which show radiation induced changes in the staining characteristics of angle lapped and stained sections of the SOS interface. The experimental results indicate that positive charge is trapped in the sapphire substrate near the silicon-sapphire interface due to the total ionizing radiation. A model of the radiation induced charge trapping at the silicon sapphire interface is proposed.
Published in: IEEE Transactions on Nuclear Science ( Volume: 21, Issue: 6, December 1974)