Comparison of Total Ionizing Dose Effects in SOI FinFETs Between Room and High Temperature

The synergetic effects of total ionization dose and high-temperature stress of silicon on insulator (SOI) FinFETs (FF) are investigated under ON-state bias condition. The experiments and TCAD simulations are employed to analyze the influence of different trapped-charges in the gate and buried oxide on the threshold voltage and mobility variations on the ON-state current of the devices. Results show that the threshold voltage degradation worsens for n-SOI FinFETs but weakens for the p-SOI FinFETs. Also, the ON-state current of n-SOI FinFETs is significantly enhanced, while the change of p-SOI FinFETs is weak under the synergetic effects. The threshold voltage degradation induced by synergetic effects for both n- and p-type SOI FinFETs can exceed the linear superposition of the two types of stresses, which may be related to the thermal release of trapped charges in the gate oxide. The enhanced degradation in the n-SOI FinFETs compared with the p-SOI FinFETs may result from the shallow energy level electron traps in HfO
₂
. Besides, for both n- and p-type SOI FinFETs, the ON-state current variations under the synergetic effects depend on the competitive process of threshold voltage variation and the mobility fluctuation.