Pulsed-Laser Testing to Quantitatively Evaluate Latchup Sensitivity in Mixed-Signal ASICs

Pulsed-laser testing is used to accurately determine single-event latchup (SEL) thresholds for static random-access memories (SRAMs) with different body-tie-to-drain spacings on a mixed-signal application-specific integrated circuit (ASIC), a study that could not be completed using only broad-beam heavy-ion testing. Two distinct approaches were employed with the first approach, an empirical correlation method, exploiting the complementary nature of broad-beam heavy-ion and laser testing. Various single- and dual-port SRAMs exhibited SEL thresholds ranging from 1 MeV-cm
²
/mg to over 100 MeV-cm
²
/mg, with a dual-port device possessing the smallest body-tie-to-drain spacing being latchup immune at the highest available test conditions (>300 MeV-cm
²
/mg). These results have been used to inform a follow-on ASIC design resulting in a significant improvement in chip-level SEL sensitivity. The second approach, a calculational method, uses pulsed-laser measurements and charge-deposition modeling to predict linear energy transfer (LET) thresholds without heavy-ion data. This calculational approach agrees with the empirical approach and therefore shows promise as a predictive tool for SEL threshold estimation, but further validation is required. Overall, these approaches can be effective tools for evaluating SEL susceptibilities and mitigation strategies.