Effect of Cell Placement on Single-Event Transient Pulse in a Bulk FinFET Technology

In this article, five different cell placement structures of a vertical inverter chain were designed in a commercial bulk FinFET technology to investigate the effect of cell placement on a single-event transient (SET) pulse. 3-D TCAD mixed-mode simulation indicated that the cell placement has a significant effect on SET pulsewidths. Heavy-ion experiments at Cyclotron in the China Institute of Modern Physics in Lanzhou also indicated that the effect of cell placement on the SET pulse is obvious. The experiment also indicated that the effect of cell placement on P-hit SET is larger than that on N-hit SET, and charge sharing in vertical was becoming as important as that in horizontal.