Degradation Study of InGaAsN p-i-n Solar Cell Under 1-MeV Electron Irradiation

The degradation of InGaAsN p-i-n subcell under 1-MeV electron irradiation was studied by characterizing solar cells and dilute nitride bulk layers before and after irradiation. Cells are measured to retain more than 94% of their original photocurrent after 10
¹⁵
cm
^-2
, 1-MeV electron irradiation. Moreover, no significant degradation of the optoelectronic properties is observed after irradiation.