Electron Irradiation Effect on Van Der Waals Transistor for High-Detectivity Near-Infrared Photodetectors

In this article, we present a study of electron irradiation effect on α-In
₂
Se
₃
-based transistors for near-infrared photodetection. The dark current (I
_dark
), photocurrent (I
_ph
),responsivity (R), external quantum efficiency (EQE), and specific detectivity (D*)of the photodetector have been investigated systematically after the irradiation. The defects induced by electron irradiation and the α-In
₂
Se
₃
/air interface modified bythe physical adsorption and chemical reaction have an important impact on the time annealing process. Compared with the para-meters before irradiation, Rand D* for a wavelength of 1064 nm have been increased by 46.24% and 53.08%, respectively, when the optical power intensity is 81.5μW/cm
²
. Our results show that α-In
₂
Se
₃
-based photodetectors have a potential application in the aerospace and nuclear industries.