Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes

The effects of the white-light X-ray and 170-keV proton beam irradiation on the electrical and optical characteristics of the InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) are analyzed and compared. Different from the negative effects of the proton irradiation, the X-ray irradiation shows positive effects on the LEDs’ performance. In detail, after the 100 Mrad(Si) X-ray irradiation, the p-n junction resistance decreases from the original 2.51 to
$2.08~\Omega $
, the light output power increases from 170 to 203 mW (at a forward voltage of 3.2 V), and the maximal external quantum efficiency (EQE) increases from 56.7% to 61.8%. Based on the ABC model fittings, both the Shockley–Read–Hall recombination rate and the radiative recombination rate in the MQWs are improved by the X-ray irradiation. The Hall effect measurements reveal the chemical bond breaking of the Mg-H complex in the p-type GaN. Therefore, the improvement of the LED by the X-ray irradiation should be caused by the chemical bond variations of the defect-related complex in the MQWs and the Mg-H complex in the p-type GaN.