Design and Implementation of a High-Voltage Radiation-Hard Hall Switch Sensor

This article presents a high-voltage radiation-hard Hall switch sensor based on a
$0.35~\mu \text{m}$
BCD process. The correlation double sampling (CDS) circuit which is the most sensitive block to single-event effect (SEE) is hardened by dual path design. Through emulation-based fault injection technology, narrow pulse filters (NPFs) are introduced into the sensitive nodes. Besides, to meet the requirement of high-voltage integrated circuits under radiation environment, laterally double-diffused MOS (LDMOS) devices are hardened to enhance their single-event burnout (SEB) threshold voltage and total ionizing dose (TID) tolerance. Experimental results demonstrate that the proposed 28-V Hall switch sensor has anti-TID capability up to 100 krad(Si) and is tolerant to SEB and single-event upset (SEU) after 1600-pJ pulsed-laser irradiation.