A 28/38 GHz Dual-Band Power Amplifier for 5G Communication

This work presents a 28/38 GHz dual-band power amplifier (PA) for fifth-generation (5G) communication. In this work, a T-topology-matching network is proposed at the output for its dual-band operation and low insertion loss. Also, a modified dual-
LC
tank-matching method is proposed for the input and interstage part due to its wideband performance and large-impedance transformation capability. This modified dual-
LC
tank boosts the transformation ratio to 30 at the interstage matching without trading bandwidth for the 28/38 GHz operation. Furthermore, circular inductors are applied to the matching networks for low insertion loss. This design is fabricated in a 0.25-
$\mu \text{m}$
SiGe:C BiCMOS technology with a core area of 300
$\times 770\,\,\mu \text{m}^{2}$
. In combination with the proposed methods, this PA achieves 28/38 GHz dual-band operation with high power-added efficiency (PAE). At 28 GHz, the measured peak power-added efficiency (PAE
$_{\mathrm {peak}}$
) is 25%, the saturated output power (
$P_{\mathrm {sat}}$
) is 18.8 dBm, and 1-dB compressed power (
$P_{\mathrm {1~dB}}$
) is 17.8 dBm. At 38 GHz, those are 17.5%, 17 dBm, and 15.8 dBm, respectively.