Digital Predistortion of RF Power Amplifiers Robust to a Wide Temperature Range and Varying Peak-to-Average Ratio Signals

In this work, a digital predistortion (DPD) model for the linearization of RF power amplifiers (PAs) is presented. The model provides a linearized gain (DPD + PA) independent of the instantaneous transistor channel temperature within a predefined temperature window. Channel temperature variations due to varying ambient temperatures or changes in the signal probability density function (PDF) cause long-term memory effects, which results in dispersed (dynamic) AM/AM and AM/PM characteristics. The presented model is used to compensate for the memory effects due to self-heating and external temperature changes by estimating the transistor channel temperature through a linear single-pole Foster thermal network. The DPD model uses a first-order Taylor approximation to cancel out temperature-based nonlinearities. Gaussian pulses are used to extract the PA intrapulse gain at different temperatures without being affected by the signal PDF, thus allowing temperature- and signal-independent PA characterization. The model is validated from
$20~^\circ \text{C}$
to
$80~^\circ \text{C}$
and by considering a class-B 3.75-GHz 10-W gallium nitride (GaN)-on-SiC PA. The DPD performance is evaluated by considering the normalized root-mean-squared error (NRMSE), the output spectra, and adjacent channel power ratio (ACPR) with and without DPD for multiple signals bandwidths and peak-to-average power ratio (PAPR) and finally compared with other approaches.