A Multioutput and Highly Efficient GaN Distributed Power Amplifier for Compact Subarrays in Wideband Phased Array Antennas

This article presents the design, implementation, and measurement results of a multioutput distributed power amplifier (MODPA) in 100-nm AlN–GaN–AlGaN high-electron-mobility transistor (HEMT) on a silicon substrate. The proposed MODPA improves power-added efficiency (PAE) in distributed amplifiers (DAs) by not wasting reverse traveling waves and delivering all forward and reverse waves to the output ports. Utilizing MODPA in implementing a subarray-based phased-array transceiver reduces the number of power splitters and PAs, significantly reducing the subarray’s chip area and power loss. A design methodology for broadband, efficient amplifier implementation by optimizing load/source impedances at the fundamental and harmonic frequencies is presented based on comprehensive source/load—pull simulations and class-J dynamic load lines. The presented broadband design methodology addresses an ambiguity for picking optimum load/source impedance at a single frequency caused by higher order harmonics of operating frequencies dropping in the band. The fabricated MODPA occupies a
$1\times3$
mm2 chip area. In 0.01–25-GHz frequency, MODPA delivered 37–41-dBm power to the four outputs, with a 17–21-dB total power gain and 22%–73% total PAE. The power gain and phase variation between the four matched-output ports are less than 1.5 dB and 3°, respectively, making MODPA an attractive design for implementing subarrays.