Effect of Annealing on Domain Wall Mass in Amorphous FeCoMoB Microwires

The effect of annealing on the domain wall mass in amorphous FeCoMoB microwires has been studied. Annealing at 300 °C for 1 h leads to the relaxation of strong stresses from production process and to the homogenization of its amorphous structure. As a result of such annealing, the domain wall mass decreases from 1.26 x 10
^-15
kg in the as-cast state to 0.72 x 10
^-15
kg in the annealed state, while the thickness of the domain wall exhibits opposite tendency and increases from 493 nm in the as-cast state to 808 nm in the annealed sample.