Anisotropic Magnetoresistance Effect in Co2(Fe–Mn)(Al–Si) Heusler Alloy Thin Film

The anisotropic magnetoresistance (AMR) effect was investigated in epitaxially grown cobalt-based Heusler thin films of Co
₂
(Fe-Mn)Si, Co
₂
(Fe-Mn)(Al-Si) (CFMAS), and Co
₂
(Fe-Mn)Al. Films were successfully fabricated onto MgO (100) single crystal substrate with an L2
₁
ordering. The signs of the AMR ratio were negative for all the samples in this paper, which implies a possibility of half-metallic electronic structure. The maximum value of AMR ratio for the CFMAS film was -0.19% at 10 K, which is comparable with the earlier works on half-metallic Heusler alloys thin films. Our results propose that the CFMAS is also a good candidate for the spintronic devices, such as giant MR junctions.