Development of CoZrTaB Laminated Thin Films With Novel CMOS Compatible Dielectric Material

This article presents optimized CoZrTaB-based laminated thin films with a wet etch-able oxide dielectric material. Wet etching capability was studied on the stack material and a narrow and clean undercut was achieved. Good uniaxial anisotropy with low coercivity (< 1 Oe) was achieved via in situ magnetic alignment during magnetron sputtering. The relative permeability of 432 and the
$Q$
-factor of 23.4 at 100 MHz were observed in high-frequency permeameter measurement. Finally, thermal annealing was carried out at various temperatures. Uniaxial anisotropy was maintained up to 300 °C, while an enhancement of permeability (by 25%) was observed.