On the Design Principles of 3-D RESURF-Enhanced RF SOI LDMOSFETs: Gate Geometry Optimization and Rescaling

Gate aspect-ratio rescaling is correlated with improved electrical performance of the 3-D-reduced-surface-field (RESURF)-enhanced 80-V radio frequency (RF) silicon-on-insulator (SOI) laterally double-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) possessing a 22.86-MW
$\cdot $
cm
$^{{-2{}}}$
unipolar figure of merit (FOM). The gate layout optimized by alignment with the n-stripe facilitates ideal charge transport into the drift region, orchestrating superior current handling capability, transconductance, and RF gain characteristics at a high gate bias for large-signal operation to bolster a 32-fold increase in transition frequency and at least one order of magnitude rise in maximum frequency of oscillation over that of the classical device at a comparable voltage rating.