Novel 3-D Fin-RFET With Dual-Doped Source/Drain to Improve ON-State Current

Schottky barrier reconfigurable field effect transistors (SB-RFETs) have attracted great attention in sub-nanometer devices. However, the poor current drivability limits its further application. In this article, a dual-doped Fin-RFET featuring a vertically stacked source/drain has been proposed for the first time. The 3-D TCAD simulations demonstrate its improved ON-state saturated current (
${I}_{ {{\mathrm {ON}}}}$
) by 8.71 times for n-FET and 10.35 times for p-FET, compared with conventional SB-RFETs. A comprehensive study of physical dimensions and materials in the proposed device is performed for device optimization, including control gate length (
${L}_{\text {CG}}$
), polarity gate length (
${L}_{\text {PG}}$
), fin height (
${H}_{\text {Fin}}$
), and spacer dielectric constant (
$\kappa _{\text {SP}}$
). Various performance metrics have been taken for evaluation, such as ON-state current
${I}_{ {{\mathrm {ON}}}}$
, OFF-state current
${I}_{ {{\mathrm {OFF}}}}$
, maximum of transconductance
${g}_{\text {max}}$
, and cut-off frequency
${f}_{T}$
. The results of our work offer a valuable reference for the rational design of the proposed device according to diverse customized functions.