Electrospinning-Driven InHfOx Nanofiber Channel Field-Effect Transistors and Humidity Stability Exploration

High-performance field-effect transistors (FETs) based on electrospun Hf-doped In2O3 nanofibers as channel layers have been constructed in this article. InHfOx nanofibers were studied using scanning electron microscopy (SEM), X-ray diffraction (XRD), and electrical measurements to investigate their crystallinity, surface morphology, and electrical properties. Enhanced electrical performance has been achieved for FETs with an optimized Hf doping concentration of 3%, including high field-effect mobility (
$\mu _{{\mathrm {FE}}}$
) of 1.93 cm2V−1s−1, a large
${I}_{{\mathrm {on}}}/{I}_{{\mathrm {off}}}$
of
$1.39\times 10$
7, a low
${V}_{{\mathrm {TH}}}$
of 0.59 V, and a small interfacial trap state (
${D}_{{\mathrm {it}}}$
) of
$7.29\times10$
11 cm−3. Humidity stability explorations have indicated that InHf
$_{3\%}\text{O}$
-based FET device performance is the most stable of all devices, confirmed by low-frequency noise (LFN) measurements and positive bias stress tests (PBSTs). The main reason can be attributed to the Hf-doping-induced hydrophobicity of InHfOx nanofibers. To demonstrate the capability of the device in more complex logic circuits, a resistor-loaded inverter based on InHf
$_{3\%}\text{O}$
/SiO2 FET exhibits excellent full swing characteristics with a voltage gain of 3. Our work has indicated the great potential prospects of electrospinning-derived nanofiber-based FETs in future oxide-based electronics.