A Hamming Weight Calculation of Binary String in One nMOS Transistor–One Ag/HfO2/Black Phosphorus/Pt Memristor

Memristors hold promise for efficient digital computing and information storage due to their nanoscale size and nonvolatile storage capability. However, the randomness of the area formed by the conductive filaments (CFs) causes unstable switching parameters of the memristor. In this study, a new double-layer structure with Ag/HfO
₂
/black phosphorus/Pt was designed on a silicon substrate to improve the performance of the memristor. The results show that the devices have highly stable state switching and concentrated resistance distribution characteristics, better retention capacity, and better endurance. In addition, we designed one transistor–one memristor (1T–1M) structure based on the performance of the memristor and used it to calculate the Hamming weight (HW) of the binary string. The results show that the average error of the current values is only 1.04% and 1.01% for the 4- and 8-bit binary strings, respectively, and that there is an excellent linear fit between the output current and the HWs. The error rate and calculation stability are better than the existing calculation methods. This work provides new ideas in efficient physical computing and applications in areas such as information coding.