Comparison of 2-D MoS2 and Si Ferroelectric FET Nonvolatile Memories Considering the Trapped-Charge-Induced Variability

This brief investigates scaled 2-D MoS
₂
ferroelectric field-effect transistor (FeFET) nonvolatile memories (NVMs) considering the trapped-charge-induced variability with the aid of Technology Computer Aided Design (TCAD) atomistic simulations. Our study indicates that, compared with the Si channel, the monolayer MoS
₂
channel with larger electron affinity and bandgap energy can result in an FeFET NVM with larger memory window (MW). Moreover, due to its lower channel permittivity and channel thickness, the 2-D MoS
₂
FeFET possesses a superior immunity to trapped-charge-induced variability, and the gap in MW between MoS
₂
and Si FeFETs enlarges under the presence of trapped charges. Besides, due to its atomically thin channel thickness and superior electrostatic integrity, the scaled 2-D MoS
₂
FeFET possesses a remarkably better read margin than the Si counterpart. Our study may provide insights for future scaling of FeFET NVMs.