Bulk Electron Accumulation LDMOS With Extended Superjunction Gate

An Extended Superjunction (SJ) Gate (ESG) Lateral Double-diffused Metal–Oxide Semiconductor (LDMOS) with full bulk electron accumulation in the drift is proposed, and the physical mechanism is investigated by the SENTAURUS. It features a Fin Gate including Planar Gate (PG) and ESG: the ESG is formed by the P-Pillar and two integrated back-to-back diodes
$\text{D}_{{2}}$
and
$\text{D}_{{1}}$
, then the gate potential
${V}_{\text {GS}}$
is extended through the whole P-Pillar. Additionally, the gate oxide
${W}_{\text {oxide}}$
is inserted between the P- and N-Pillars of the SJ. At the ON-state, the 3-D electron channels are produced at the P-well by the Fin Gate, and the extra bulk accumulation effect is induced at the sidewalls of the N-Pillar by the positive
${V}_{\text {GS}}$
of the ESG, which can significantly decrease the
${R}_{\mathrm{\scriptstyle {ON, SP}}}$
. At the OFF-state, the N- and P-Pillars deplete from each other through the gate oxide
${W}_{\text {oxide}}$
like the conventional SJ. The 3-D simulation results show that the
BV
and
${R}_{\mathrm{\scriptstyle {ON, SP}}}$
are 171 V and 0.49
$\text{m}\Omega \cdot \text {cm}^{{2}}$
, respectively. The
FOM
is high up to 59.6 MW/cm
²
, which breaks through the silicon limit of the RESURF.