CuO/Pentacene Type-II Planar Heterojunction for UV-Vis-NIR Photodetection With High EQE

This work relies on the realization of a type-II planar heterostructure of CuO/Pentacene photodetector. The proposed device demonstrates broadband ultraviolet-visible-near-infrared (UV-Vis-NIR) light absorption and photodetection properties. The low-cost fabrication method and properties of Al/Pentacene/CuO/indium tin oxide (ITO) planar heterostructure structure are described, which takes the optical and electrical benefits from both Pentacene and CuO materials. According to electrical characterization, the resulting device has a high sensitivity for ultraviolet (UV) (300 nm), visible (Vis) (700 nm), and near-infrared (NIR) (900 nm) wavelengths, with the external quantum efficiency (EQE) (%) of
$6.07\times 10^{{4}}$
,
$2.49\times 10^{{4}}$
, and
$3.23\times 10^{{3}}$
, respectively. Also, the photodetector has a quick rise/fall time of 12.29 ms/15.09 ms. These findings imply that the CuO/Pentacene planar heterojunction has a high potential for broadband detection and could be used in different optoelectronic applications.