A Novel Chip Surface Shielding Structure for Promoting Insulation Capability of High Voltage Semiconductor Chip

Partial discharge which often occurs at channel stopper of high voltage chip will cause insulation damage of chips which is harmful to the device application. Thus, it is important to improve the whole design to promote chip insulation capacity. In this brief, a novel chip surface shielding structure named U-protector is proposed which can promote the insulation capability of high voltage chips. Through the simulation, it can be found that the maximum electric field strength of chips can decrease 8% with adding U-protector. Moreover, verified by experiments, the partial discharge initial voltage (PDIV) of chips with U-protector can be promoted about 6.1%–12.7% of rated voltage. Furthermore, the universality and practicality of this structure are also investigated which can be used in multiple high voltage chips.