Study of a GaN-Based Light-Emitting Diode With a Ga₂O₃ Current Blocking Layer and a Ga₂O₃ Surface Passivation Layer

A new device structure, which includes a Ga
₂
O
₃
current blocking layer (CBL) and a Ga
₂
O
₃
surface passivation layer (SPL), is used to fabricate a GaN-based light-emitting diode (LED). Due to the inherent properties of Ga
₂
O
₃
material, the current spreading phenomenon can be effectively improved and the surface leakage current and Fresnel reflection can be remarkably reduced. The appropriate thicknesses of the Ga
₂
O
₃
CBL and SPL, according to the results from series experiments, are 10 and 50 nm, respectively. In an experiment, under an injection current density of 100 A/cm
²
, the studied LED device with a 10 nm-thick Ga
₂
O
₃
CBL and a 50 nm-thick Ga
₂
O
₃
SPL shows enhancements of 76.8%, 60.7%, 76.8%, and 56.2% in light output power (LOP), luminous efficacy, external quantum efficiency (EQE), and wall-plug efficiency, respectively, in comparison to a conventional LED without the designed structure. In addition, the studied LED exhibits obvious improvement in far-field radiation pattern compared to the conventional LED device. Thus, the studied structure, which includes an appropriate Ga
₂
O
₃
CBL and SPL, offers a promising route to fabricate high-performance GaN-based LEDs.