Impact of Width Scaling and Parasitic Series Resistance on the Performance of Silicene Nanoribbon MOSFETs

The performance of 15-nm-gate-length MOSFETs based on silicene nanoribbons (SiNRs) is analyzed with respect to width scaling, series resistance, and ballisticity of electron transport. Numerical simulations were based on quantum transport with atomic resolution of nanoribbon Hamiltonians and their bandstructure. Assuming negligible tunneling, we found that SiNR MOSFETs in which the nanoribbons are wider than 2.8 nm can fulfill the requirements set by the International Roadmap for Devices and Systems (IRDS) for the “3-nm” logic node even with 50% ballisticity and parasitic series resistance of 270 Ωμm.