Characterization and Extraction of Power Loop Stray Inductance With SiC Half-Bridge Power Module

The power loop stray inductances of the silicon carbide (SiC) half-bridge power module (HBPM) must be included in the circuit simulation model to predict the power device switching characteristics and the power bus noise caused by the power converter. Instead of a full equivalent circuit model of the SiC HBPM, a simplified but accurate three-terminal equivalent circuit model is presented in this article. Based on the simplified model, a novel frequency-domain impedance measurement method based on the two-port network technique is proposed to extract the power loop inductances through direct measurement. By using the extracted power loop inductances of a 1.2-kV 300-A SiC HBPM, a three-terminal equivalent model of the HBPM is obtained, and its accuracy is validated by the finite element method and experiments.