Improved Temperature Resilience and Device Performance of Negative Capacitance Reconfigurable Field Effect Transistors

In this article, the device performance of negative capacitance reconfigurable field effect transistor (NC-R-FET) at elevated temperatures has been extensively studied by employing the baseline approach that uses TCAD models and Landau Khalatnikov equation. The impact of reconfigurable device design and negative capacitance (NC) effect of ferroelectric (FE) insulator has been extensively explored by studying various key device parameters and exhaustive comparison has been drawn with the conventional device to bring out the advantages of the proposed device. It has been demonstrated that NC-R-FET exhibits super steep switching characteristics, reduced leakage current, and substantial improvement in ION/IOFF ratios, transconductance generation factor and unity gain frequency.