Thermal Stability Enhancement of NiGe Metal Source/Drain and Ge pMOSFETs by Dopant Segregation

The thermal stability has been investigated for the NiGe-n-Ge junctions with and without the dopant segregation (DS). It is found that the B DS sufficiently improves the thermal tolerance of the NiGe-n-Ge junctions, and the DS NiGe-n-Ge junctions can be stabilized up to 550 °C. This phenomenon suggests that the DS NiGe metal source/drain (S/D) is a feasible structure for broadening the processing window of future high-performance Ge MOSFETs.