Analysis of Self Heating Effect in DC/AC Mode in Multi-Channel GAA-Field Effect Transistor

In this article, the self-heating effect (SHE) of both dc and ac for a three-channel nanowire-field effect transistor (FET) is investigated and analyzed. In the dc mode, as
$\Delta {T}_{{\text {max}}}$
(definition:
${T}_{{\text {max}}}-{300}$
K) increases to 65 K, the transistor suffers from an
${I}_{{\text {on}}}$
degradation of 3.8% along with a
${R}_{{\text {th}}}$
of 4.875 [K/
$\mu \text{W}$
]. In the ac mode, as the heating time (same as the pulse time) increases, the heat is accumulated more and the cooling time increases accordingly. It is confirmed that
$\Delta {T}_{{\text {max}}}$
decreases as the device operating frequency increases and
$\Delta {T}_{{\text {max}}}$
saturates to about 40 K at 4 GHz. Finally, the thermal characteristics and the lifetime are analyzed while changing the duty cycle to 25%, 50%, and 75%. It shows that
$\Delta {T}_{{\text {max}}}$
increases to 38, 42, and 45 K, respectively, and HCI and BTI lifetime can be increased up to two times and three times, respectively.